BFG67/X,215 NXP Semiconductors, BFG67/X,215 Datasheet - Page 11

• Manufacturer Part Number: BFG67/X,215
• Description: TRANS NPN 10V 8GHZ SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BFG67/X,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 380mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 15mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 380 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934007250215; BFG67/X T/R; BFG67/X T/R

NXP Semiconductors
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
NPN 8 GHz wideband transistors
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT143B
1.1
0.9
A
max
A 1
0.1
4
1
y
0.48
0.38
b p
b 1
IEC
0.88
0.78
b 1
D
e
0.15
0.09
e 1
c
JEDEC
3.0
2.8
D
REFERENCES
b p
0
Rev. 05 - 23 November 2007
1.4
1.2
E
3
2
1.9
w
e
B
scale
M
EIAJ
1
B
1.7
e 1
v
M
H E
2.5
2.1
2 mm
A
BFG67; BFG67/X; BFG67/XR
A
0.45
0.15
L p
A 1
0.55
0.45
Q
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
w
Q
Product specification
L p
0.1
y
A
ISSUE DATE
97-02-28
c
11 of 14
SOT143B
X