BFG67/X,215 NXP Semiconductors, BFG67/X,215 Datasheet - Page 9

• Manufacturer Part Number: BFG67/X,215
• Description: TRANS NPN 10V 8GHZ SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BFG67/X,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 380mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 15mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 380 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934007250215; BFG67/X T/R; BFG67/X T/R

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 8 GHz wideband transistors
V
V
CE
CE
= 8 V; I
= 8 V; I
C
C
= 15 mA; Z
= mA; Z
O
= 50 .
O
= 50 .
Fig.17 Common emitter forward transmission coefficient (S
180
j
j
Fig.16 Common emitter input reflection coefficient (S
0
0.2
0.2
150
50
150
40
40 MHz
0.5
0.5
0.2
120
30
120
3 GHz
Rev. 05 - 23 November 2007
20
0.5
10
90
90
1
1
1
3 GHz
2
BFG67; BFG67/X; BFG67/XR
60
60
40 MHz
2
2
5
10
MBB314
MBB313
30
30
5
5
11
10
10
).
0
21
).
Product specification
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