BFU725F/N1,115 NXP Semiconductors, BFU725F/N1,115 Datasheet - Page 4

• Manufacturer Part Number: BFU725F/N1,115
• Description: TRANSISTOR NPN 40MA SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFU725F/N1,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 55GHz
• Noise Figure (db Typ @ F): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
• Gain: 10dB ~ 24dB
• Power - Max: 136mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 10mA, 2V
• Current - Collector (ic) (max): 40mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 55 GHz
• Collector- Emitter Voltage Vceo Max: 2.8 V
• Emitter- Base Voltage Vebo: 0.55 V
• Continuous Collector Current: 40 mA
• Power Dissipation: 136 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5111-2; BFU725F/N1,115

NXP Semiconductors
7. Characteristics
Table 7.
T
BFU725F_N1_1
Product data sheet
Symbol Parameter
V
V
I
I
h
C
C
C
f
G
NF
G
s
C
CBO
T
j
FE
(BR)CBO
(BR)CEO
CES
EBS
CBS
21
p(max)
ass
= 25 C unless otherwise specified.
2
collector-base breakdown
voltage
collector-emitter breakdown
voltage
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
maximum power gain
insertion power gain
noise figure
associated gain
Characteristics
Conditions
I
I
I
I
V
V
V
I
I
I
I
I
C
C
E
C
C
C
C
C
C
CB
EB
CB
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
= 0 mA; V
= 2.5 A; I
= 1 mA; I
= 10 mA; V
= 25 mA; V
= 25 mA; V
= 25 mA; V
= 5 mA; V
= 5 mA; V
= 0.5 V; f = 1 MHz
= 2 V; f = 1 MHz
= 2 V; f = 1 MHz
Rev. 01 — 13 July 2009
B
CB
CE
CE
E
= 0 mA
CE
CE
CE
CE
= 0 mA
= 4.5 V
= 2 V;
= 2 V;
= 2 V
= 2 V; f = 2 GHz; T
= 2 V; T
= 2 V; T
S
S
amb
amb
=
=
NPN wideband silicon germanium RF transistor
= 25 C
= 25 C
opt
opt
; T
; T
amb
amb
amb
= 25 C
= 25 C
= 25 C
BFU725F/N1
[1]
Min Typ Max Unit
10
2.8
-
-
160 280 400
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
-
-
25
-
268 -
400 -
70
55
28
27
25.5 -
18
13
26.7 -
25.4 -
23
16
9.3
0.42 -
0.43 -
0.47 -
0.7
1.1
24
22
20
13.5 -
10
-
-
40
100 nA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4 of 11
V
V
mA
fF
fF
fF
GHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB