BFG505/X,215 NXP Semiconductors, BFG505/X,215 Datasheet - Page 5
![TRANS NPN 6V 18MA SOT343N](/photos/5/30/53004/568-sot-143b_sml.jpg)
BFG505/X,215
Manufacturer Part Number
BFG505/X,215
Description
TRANS NPN 6V 18MA SOT343N
Manufacturer
NXP Semiconductors
Datasheet
1.BFG505215.pdf
(13 pages)
Specifications of BFG505/X,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.2dB ~ 1.9dB @ 900MHz ~ 2GHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 6V
Current - Collector (ic) (max)
18mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 5mA @ 6V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.018 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934018770215
BFG505/X T/R
BFG505/X T/R
BFG505/X T/R
BFG505/X T/R
NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistors
V
Fig.3
T
amb
CE
(GHz)
Fig.5
f T
h FE
250
200
150
100
= 6 V.
50
12
= 25 C; f = 1 GHz.
0
8
4
0
10
10
3
DC current gain as a function of collector
current.
1
Transition frequency as a function of
collector current.
10
2
1
10
1
1
10
V CE = 6 V
V CE = 3 V
I C (mA)
10
I C (mA)
MRA639
MRA641
10
Rev. 04 - 22 November 2007
10
2
2
handbook, halfpage
handbook, halfpage
I
V
G
MSG = maximum stable gain;
G
C
Fig.4
CE
UM
max
= 0; f = 1 MHz.
(pF)
C re
gain
(dB)
0.4
0.3
0.2
0.1
Fig.6 Gain as a function of collector current.
= 6 V; f = 900 MHz.
25
20
15
10
= maximum unilateral power gain;
= maximum available gain.
0
5
0
0
0
Feedback capacitance as a function of
collector-base voltage.
2
G UM
MSG
4
BFG505; BFG505/X
4
6
8
Product specification
I C (mA)
8
V CB (V)
MRA640
MRA642
5 of 13
10
12