BFG505/X,215 NXP Semiconductors, BFG505/X,215 Datasheet - Page 6
![TRANS NPN 6V 18MA SOT343N](/photos/5/30/53004/568-sot-143b_sml.jpg)
BFG505/X,215
Manufacturer Part Number
BFG505/X,215
Description
TRANS NPN 6V 18MA SOT343N
Manufacturer
NXP Semiconductors
Datasheet
1.BFG505215.pdf
(13 pages)
Specifications of BFG505/X,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.2dB ~ 1.9dB @ 900MHz ~ 2GHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 6V
Current - Collector (ic) (max)
18mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 5mA @ 6V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.018 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934018770215
BFG505/X T/R
BFG505/X T/R
BFG505/X T/R
BFG505/X T/R
NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistors
V
G
MSG = maximum stable gain;
G
V
G
MSG = maximum stable gain;
G
CE
CE
UM
max
UM
max
gain
(dB)
gain
(dB)
= 6 V; f = 2 GHz.
Fig.7 Gain as a function of collector current.
= 6 V; I
25
20
15
10
= maximum unilateral power gain;
= maximum unilateral power gain;
50
40
30
20
10
= maximum available gain.
= maximum available gain.
5
0
0
10
0
Fig.9 Gain as a function of frequency.
C
G UM
MSG
= 5 mA.
MSG
G UM
10
4
2
G max
10
8
3
I C (mA)
f (MHz)
G max
MRA643
MRA645
Rev. 04 - 22 November 2007
12
10
4
handbook, halfpage
handbook, halfpage
V
G
MSG = maximum stable gain;
G
V
CE
CE
UM
max
F min
Fig.10 Minimum noise figure and associated
(dB)
gain
(dB)
= 6 V; I
= 6 V.
= maximum unilateral power gain;
50
40
30
20
10
= maximum available gain.
0
5
4
3
2
1
0
10
10
Fig.8 Gain as a function of frequency.
1
C
available gain as functions of collector
current.
G UM
MSG
= 1.25 mA.
2000 MHz
1000 MHz
900 MHz
500 MHz
10
2
BFG505; BFG505/X
1
G ass
F min
10
I C (mA)
3
Product specification
f = 900 MHz
f (MHz)
1000 MHz
2000 MHz
MRA650
MRA644
6 of 13
10
10
4
20
15
10
0
G ass
5
(dB)
5