BFG520W,115 NXP Semiconductors, BFG520W,115 Datasheet - Page 13

• Manufacturer Part Number: BFG520W,115
• Description: TRANS NPN 6V 70MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG520W,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934030630115; BFG520W T/R; BFG520W T/R

NXP Semiconductors
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
NPN 9 GHz wideband transistors
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343N
1.1
0.8
A
max
0.1
A 1
4
1
0.4
0.3
b p
y
IEC
b 1
0.7
0.5
b 1
D
e
e 1
0.25
0.10
c
JEDEC
b p
2.2
1.8
D
3
2
REFERENCES
0
Rev. 04 - 21 November 2007
1.35
1.15
E
w
B
M
B
1.3
e
scale
EIAJ
1
1.15
e 1
A
2.2
2.0
H E
A 1
2 mm
0.45
0.15
L p
BFG520W; BFG520W/X
0.23
0.13
H E
Q
E
detail X
0.2
PROJECTION
v
EUROPEAN
L p
0.2
w
A
Q
c
Product specification
0.1
y
v
X
ISSUE DATE
M
97-05-21
A
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SOT343N