BFG520W,115 NXP Semiconductors, BFG520W,115 Datasheet - Page 5
![TRANS NPN 6V 70MA SOT343N](/photos/5/65/56512/568-sot-343n_sml.jpg)
BFG520W,115
Manufacturer Part Number
BFG520W,115
Description
TRANS NPN 6V 70MA SOT343N
Manufacturer
NXP Semiconductors
Datasheet
1.BFG520WX115.pdf
(15 pages)
Specifications of BFG520W,115
Package / Case
SOT-343N
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.1dB ~ 2.1dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 20mA, 6V
Current - Collector (ic) (max)
70mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60
Dc Current Gain Hfe Max
60 @ 20mA @ 6V
Mounting Style
SMD/SMT
Configuration
Dual
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
70 mA
Power Dissipation
500 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934030630115
BFG520W T/R
BFG520W T/R
BFG520W T/R
BFG520W T/R
NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistors
f = 1 GHz; T
V
(GHz)
CE
Fig.3
h
f
150
FE
100
T
Fig.5
= 6 V.
50
12
0
8
0
4
10
1
1
amb
DC current gain as a function of collector
current; typical values.
Transition frequency as a function of
collector current; typical values.
= 25 C.
1
10
10
I
C
(mA)
I
C
(mA)
V
MLB809
MLB807
CE
6 V
3 V
=
10
10
Rev. 04 - 21 November 2007
2
2
handbook, halfpage
I
C
(pF)
C re
= 0; f = 1 MHz.
Fig.4
0.6
0.4
0.2
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
2.5
BFG520W; BFG520W/X
5
Product specification
7.5
V
CB
MLB808
(V)
5 of 15
10