BFG540,215 NXP Semiconductors, BFG540,215 Datasheet - Page 4

• Manufacturer Part Number: BFG540,215
• Description: TRANS NPN 15V 9GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG540,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 60 @ 40mA @ 8V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 120 mA
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934018840215; BFG540 T/R; BFG540 T/R

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. V
3. d
4. I
I
h
C
C
C
f
G
F
P
ITO
V
d
SYMBOL
j
CBO
T
s
FE
2
L1
O
= 25 C unless otherwise specified.
e
c
re
NPN 9 GHz wideband transistor
UM
21
f
measured at f
V
f
measured at f
f
p
p
C
p
2
im
CE
p
UM
= 900 MHz; f
= 795.25 MHz; f
= 250 MHz; f
= 40 mA; V
= V
= 60 dB (DIN 45004B); I
= 8 V; I
is the maximum unilateral power gain, assuming s
O
; V
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
output voltage
second order intermodulation
distortion
q
C
= V
= 40 mA; R
CE
(2p
(p + q r)
q
q
O
= 902 MHz;
= 8 V; V
= 560 MHz; measured at f
PARAMETER
q)
q
6 dB; V
= 803.25 MHz; f
= 898 MHz and f
= 793.25 MHz.
O
L
r
= 50 ; T
= 275 mV; T
= V
C
O
= 40 mA; V
6 dB;
r
amb
(2q
= 805.25 MHz;
amb
= 25 C;
p)
CE
f = 900 MHz; T
I
I
I
I
I
I
T
I
T
I
T
I
T
f = 900 MHz; T
f = 900 MHz; T
f = 2 GHz; T
I
note 2
note 3
note 4
(p + q)
Rev. 05 - 21 November 2007
= 25 C;
E
C
C
E
C
C
C
C
C
C
= 904 MHz.
amb
amb
amb
amb
s
s
s
= 0; V
= i
= 40 mA; V
= i
= 0; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 8 V; Z
=
=
=
e
c
= 25 C
= 25 C
= 25 C
= 25 C
= 810 MHz.
opt
opt
opt
= 0; V
= 0; V
CB
CB
; I
; I
; I
C
C
C
L
= 8 V
= 8 V; f = 1 MHz
CONDITIONS
= Z
= 10 mA; V
= 40 mA; V
= 10 mA; V
amb
EB
CB
12
CE
CE
CE
CE
CE
CE
amb
amb
amb
is zero and
= 0.5 V; f = 1 MHz
= 8 V; f = 1 MHz
S
= 25 C
= 8 V
= 8 V; f = 1 GHz;
= 8 V; f = 900 MHz;
= 8 V; f = 2 GHz;
= 8 V; f = 900 MHz;
= 8 V; R
= 75 ; T
= 25 C
= 25 C
= 25 C
CE
CE
CE
L
= 50 ;
= 8 V;
= 8 V;
= 8 V;
amb
G
UM
= 25 C;
=
10
BFG540; BFG540/X;
60
15
log
MIN.
-------------------------------------------------------- dB.
1
–
120
2
0.9
0.5
9
18
11
16
1.3
1.9
2.1
21
34
500
s
TYP.
50
11
Product specification
s
BFG540/XR
2
21
1
2
50
250
1.8
2.4
–
MAX.
s
22
4 of 14
2
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
mV
dB
UNIT