BFG540,215 NXP Semiconductors, BFG540,215 Datasheet - Page 8

• Manufacturer Part Number: BFG540,215
• Description: TRANS NPN 15V 9GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG540,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 60 @ 40mA @ 8V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 120 mA
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934018840215; BFG540 T/R; BFG540 T/R

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
I
C
C
= 10 mA; V
= 10 mA; V
CE
CE
= 8 V; Z
= 8 V; Z
o
o
= 50 ; f = 900 MHz.
= 50 ; f = 2 GHz.
180
180
G max = 11.4 dB
0
0
135
135
135
135
0.2
0.2
MS
0.2
0.2
0.2
F min = 2.1 dB
0.5
0.5
0.5
0.5
Fig.15 Noise circle figure.
G = 10 dB
Fig.16 Noise circle figure.
Rev. 05 - 21 November 2007
F = 2.5 dB
OPT
G = 9 dB
F = 3 dB
F = 1.5 dB
0.5
0.5
F min = 1.3 dB
F = 2 dB
F = 3 dB
F = 4 dB
G = 8 dB
OPT
90
90
90
90
1
1
1
1
1
1
2
2
2
2
2
2
5
5
45
45
45
45
5
5
5
5
MRA762
MRA763
BFG540; BFG540/X;
0
0
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFG540/XR
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