BFG590/X,215 NXP Semiconductors, BFG590/X,215 Datasheet - Page 5

• Manufacturer Part Number: BFG590/X,215
• Description: TRANS NPN 15V 200MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG590/X,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 70mA, 8V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60 @ 70 mA @ 8 V
• Dc Current Gain Hfe Max: 60 @ 70mA @ 8V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934022990215; BFG590/X T/R; BFG590/X T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistors
(GHz)
V
V
f
CE
Fig.3
CE =
T
h FE
250
200
150
100
Fig.5
= 8 V.
50
4 V; f = 1 GHz.
0
0
10
8
6
4
2
10
2
DC current gain as a function of collector
current; typical values.
Transition frequency as a function of
collector current; typical values.
10
1
1
I
C
(mA)
10
I C (mA)
MLC058
MRA749
10
Rev. 04 - 12 November 2007
10
2
2
handbook, halfpage
I
C
(pF)
C re
= 0; f = 1 MHz.
Fig.4
1.2
0.8
0.4
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
2
BFG590; BFG590/X
4
6
Product specification
8
V
CB
MLC057
(V)
5 of 11
10