BFG590/X,215 NXP Semiconductors, BFG590/X,215 Datasheet - Page 6

• Manufacturer Part Number: BFG590/X,215
• Description: TRANS NPN 15V 200MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG590/X,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 70mA, 8V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60 @ 70 mA @ 8 V
• Dc Current Gain Hfe Max: 60 @ 70mA @ 8V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934022990215; BFG590/X T/R; BFG590/X T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
I
NPN 5 GHz wideband transistors
C
gain
(dB)
gain
(dB)
f = 900 MHz; V
= 20 mA; V
Fig.6
30
20
10
50
40
30
20
10
0
0
10
Fig.8
0
G UM
CE
MSG
Gain as a function of collector current;
typical values.
= 4 V.
CE
20
Gain as a function of frequency;
typical values.
= 4 V.
10
2
40
60
10
3
f (MHz)
80
G max
G max
G UM
I
C
MLC059
MLC061
(mA)
10
100
Rev. 04 - 12 November 2007
4
handbook, halfpage
handbook, halfpage
f = 2 GHz; V
I
C
gain
(dB)
gain
(dB)
= 80 mA; V
Fig.7
50
12
40
30
20
10
0
Fig.9
8
4
0
10
0
CE
G UM
Gain as a function of collector current;
typical values.
MSG
CE
= 4 V.
= 4 V.
Gain as a function of frequency;
typical values.
20
10
2
BFG590; BFG590/X
40
60
10
Product specification
3
f (MHz)
80
G max
G UM
I
G max
C
MLC062
MLC060
(mA)
6 of 11
10
100
4