NESG2021M16-A CEL, NESG2021M16-A Datasheet - Page 10
![TRANS NPN 2GHZ M16](/photos/29/5/290514/nesg_sml.jpg)
NESG2021M16-A
Manufacturer Part Number
NESG2021M16-A
Description
TRANS NPN 2GHZ M16
Manufacturer
CEL
Datasheet
1.NESG2021M16-T3-A.pdf
(12 pages)
Specifications of NESG2021M16-A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
25GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
Gain
10dB ~ 18dB
Power - Max
175mW
Dc Current Gain (hfe) (min) @ Ic, Vce
130 @ 5mA, 2V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
Surface Mount
Continuous Collector Current
35 mA
Emitter- Base Voltage Vebo
1.5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Power Dissipation
175 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
<R>
S-PARAMETERS
10
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Remark The graphs indicate nominal characteristics.
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
10
5
4
2
0
8
4
0
3
1
6
2
1
1
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
G
a
G
Collector Current I
Collector Current I
a
10
10
NF
NF
C
C
(mA)
(mA)
V
f = 5.2 GHz
V
f = 1 GHz
CE
CE
= 3 V,
= 3 V,
Data Sheet PU10393EJ03V0DS
100
100
30
25
20
15
10
5
25
20
15
10
5
0
6
5
4
3
2
1
0
1
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
G
a
Collector Current I
10
NF
C
(mA)
NESG2021M16
V
f = 2 GHz
CE
= 3 V,
100
25
15
10
5
0
30
20