NESG2021M16-A CEL, NESG2021M16-A Datasheet - Page 3

• Manufacturer Part Number: NESG2021M16-A
• Description: TRANS NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NESG2021M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
• Gain: 10dB ~ 18dB
• Power - Max: 175mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

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TYPICAL CHARACTERISTICS (T
0.0001
0.0001
Remark The graphs indicate nominal characteristics.
0.001
0.001
0.01
0.01
300
250
200
150
100
100
100
175
0.1
0.1
50
10
10
0
1
1
0.4
0.4
V
V
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
CE
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
0.5
0.5
25
= 1 V
= 3 V
Ambient Temperature T
Base to Emitter Voltage V
Base to Emitter Voltage V
0.6
0.6
50
Mounted on Glass Epoxy PCB
(1.08 cm
0.7
0.7
75
2
× 1.0 mm (t) )
100
0.8
0.8
A
A
(°C)
BE
BE
= +25°C, unless otherwise specified)
125
0.9
0.9
(V)
(V)
Data Sheet PU10393EJ03V0DS
150
1.0
1.0
0.0001
0.001
0.01
100
0.3
0.2
0.1
0.1
10
35
30
25
20
15
10
0
1
5
0
0.4
REVERSE TRANSFER CAPACITANCE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
vs. COLLECTOR TO BASE VOLTAGE
V
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector to Emitter Voltage V
0.5
= 2 V
1
Collector to Base Voltage V
2
Base to Emitter Voltage V
0.6
2
4
0.7
3
NESG2021M16
6
0.8
4
f = 1 MHz
CB
BE
CE
I
8
B
(V)
0.9
(V)
(V)
5
= 20 A
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
μ
μ
μ
μ
μ
μ
μ
μ
μ
μ
1.0
10
6
3