NESG2021M16-A CEL, NESG2021M16-A Datasheet - Page 5

• Manufacturer Part Number: NESG2021M16-A
• Description: TRANS NPN 2GHZ M16
• Manufacturer: CEL

Specifications of NESG2021M16-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
• Gain: 10dB ~ 18dB
• Power - Max: 175mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 130 @ 5mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Remark The graphs indicate nominal characteristics.
30
25
20
15
10
30
25
20
15
10
40
35
30
25
20
15
10
0
0.1
5
0
5
0
5
1
1
V
f = 2 GHz
V
f = 2 GHz
CE
CE
GAIN BANDWIDTH PRODUCT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
= 1 V,
= 3 V,
Collector Current I
Collector Current I
Frequency f (GHz)
1
MSG
|S
21e
|
2
10
10
MAG
MAG
C
C
10
(mA)
(mA)
V
I
C
CE
= 10 mA
MSG
Data Sheet PU10393EJ03V0DS
= 2 V,
100
100
100
30
25
20
15
10
35
30
25
20
15
10
40
35
30
25
20
15
10
0.1
5
0
5
0
0
5
0.1
1
V
f = 2 GHz
CE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
= 2 V,
Collector Current I
MSG
Frequency f (GHz)
Frequency f (GHz)
1
1
MSG
|S
|S
21e
21e
|
2
|
2
10
MAG
NESG2021M16
MAG
MAG
MAG
C
10
10
(mA)
V
I
V
I
C
C
CE
CE
= 10 mA
= 10 mA
MSG
MSG
= 1 V,
= 3 V,
100
100
100
5