UPA862TD-A CEL, UPA862TD-A Datasheet - Page 10

• Manufacturer Part Number: UPA862TD-A
• Description: TRANSISTOR NPN DUAL TD
• Manufacturer: CEL

Specifications of UPA862TD-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 6V, 5.5V
• Frequency - Transition: 12GHz, 6.5GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 2GHz
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 10mA, 3V / 100 @ 5mA, 1V
• Current - Collector (ic) (max): 30mA, 100mA
• Mounting Type: Surface Mount
• Package / Case: TD
• Dc Collector/base Gain Hfe Min: 150
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

UPA862TD NONLINEAR MODEL
(1) Gummel-Poon Model
(2) AF and KF are 1/f noise parameters and are bias dependant.
BJT NONLINEAR MODEL PARAMETERS
For a better understanding on AF and KF parameters, please refer to AN1026.
The appropriate values for the 1/f noise parameters (AF and KF)
shall be chosen from the table below, according to the desired
current range.
Parameters
KF
AF
RBM
KF
AF
VAR
MJE
CJC
VAF
CJE
VJE
ISC
IRB
IKF
ISE
VJC
BR
NR
IKR
NC
RE
RB
RC
BF
NE
IS
NF
54.38e-12
4.547e-15
I
I
C
C
2.071
= 5 mA
= 5 mA
1.4
7.90e-13
0.18e-12
7.0e-16
0.4e-12
NE685
infinity
0.005
0.19
2.19
1.08
12.4
0.81
0.75
109
Q1
1.3
0.5
15
10
1
1
0
2
5
3
I
997.6e-12
I
C
C
855e-12
=10 mA
2.375
=10 mA
2.551
80.4e-15
0.65e-12
137e-18
532e-18
2.4e-12
NE851
0.9871
0.9889
I
I
0.021
500.2e-12
C
C
20.4
28.7
1.28
0.45
0.87
0.34
0.52
166
Q2
2.4
2.7
1.7
1.73e-9
50
= 15 mA
= 15 mA
1
2.288
0
2.626
4
(1)
Parameters
KF (2)
AF (2)
XCJC
MJC
CJS
MJS
XTF
VTF
PTF
XTB
VJS
XTI
ITF
EG
FC
TR
TF
MODEL RANGE
Frequency:
Bias:
Date:
0.1 to 3.0 GHz
V
08/03
CE
2.0e-12
NE685
1.0e-9
0.005
0.34
0.75
1.11
=0.5 V to 2.5 V, I
0.5
0.1
Q1
0
0
6
3
0
0
3
0
1
C
= 1 mA to 20 mA
NE851
18e-12
1.0e-9
0.14
0.75
0.55
0.03
1.11
Q2
0.5
0.1
0
0
2
0
0
3
0
1