UPA862TD-A CEL, UPA862TD-A Datasheet - Page 10
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UPA862TD-A
Manufacturer Part Number
UPA862TD-A
Description
TRANSISTOR NPN DUAL TD
Manufacturer
CEL
Specifications of UPA862TD-A
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
6V, 5.5V
Frequency - Transition
12GHz, 6.5GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.5dB @ 2GHz
Power - Max
210mW
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 10mA, 3V / 100 @ 5mA, 1V
Current - Collector (ic) (max)
30mA, 100mA
Mounting Type
Surface Mount
Package / Case
TD
Dc Collector/base Gain Hfe Min
150
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
UPA862TD NONLINEAR MODEL
(1) Gummel-Poon Model
(2) AF and KF are 1/f noise parameters and are bias dependant.
BJT NONLINEAR MODEL PARAMETERS
For a better understanding on AF and KF parameters, please refer to AN1026.
The appropriate values for the 1/f noise parameters (AF and KF)
shall be chosen from the table below, according to the desired
current range.
Parameters
KF
AF
RBM
KF
AF
VAR
MJE
CJC
VAF
CJE
VJE
ISC
IRB
IKF
ISE
VJC
BR
NR
IKR
NC
RE
RB
RC
BF
NE
IS
NF
54.38e-12
4.547e-15
I
I
C
C
2.071
= 5 mA
= 5 mA
1.4
7.90e-13
0.18e-12
7.0e-16
0.4e-12
NE685
infinity
0.005
0.19
2.19
1.08
12.4
0.81
0.75
109
Q1
1.3
0.5
15
10
1
1
0
2
5
3
I
997.6e-12
I
C
C
855e-12
=10 mA
2.375
=10 mA
2.551
80.4e-15
0.65e-12
137e-18
532e-18
2.4e-12
NE851
0.9871
0.9889
I
I
0.021
500.2e-12
C
C
20.4
28.7
1.28
0.45
0.87
0.34
0.52
166
Q2
2.4
2.7
1.7
1.73e-9
50
= 15 mA
= 15 mA
1
2.288
0
2.626
4
(1)
Parameters
KF (2)
AF (2)
XCJC
MJC
CJS
MJS
XTF
VTF
PTF
XTB
VJS
XTI
ITF
EG
FC
TR
TF
MODEL RANGE
Frequency:
Bias:
Date:
0.1 to 3.0 GHz
V
08/03
CE
2.0e-12
NE685
1.0e-9
0.005
0.34
0.75
1.11
=0.5 V to 2.5 V, I
0.5
0.1
Q1
0
0
6
3
0
0
3
0
1
C
= 1 mA to 20 mA
NE851
18e-12
1.0e-9
0.14
0.75
0.55
0.03
1.11
Q2
0.5
0.1
0
0
2
0
0
3
0
1