UPA862TD-A CEL, UPA862TD-A Datasheet - Page 2

• Manufacturer Part Number: UPA862TD-A
• Description: TRANSISTOR NPN DUAL TD
• Manufacturer: CEL

Specifications of UPA862TD-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 6V, 5.5V
• Frequency - Transition: 12GHz, 6.5GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 2GHz
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 10mA, 3V / 100 @ 5mA, 1V
• Current - Collector (ic) (max): 30mA, 100mA
• Mounting Type: Surface Mount
• Package / Case: TD
• Dc Collector/base Gain Hfe Min: 150
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Note: 1. Operation in excess of any one of these parameters may
TYPICAL PERFORMANCE CURVES
SYMBOLS
V
V
V
T
P
CBO
CEO
T
STG
EBO
I
C
2. Mounted on 1.08cm
T
J
result in permanent damage.
0.5
0.4
0.3
0.2
0.1
300
250
200
150
100
210
190
180
0
50
REVERSE TRANSFR CAPACITANCE vs.
0
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
COLLECTOR TO BASE VOLTAGE
Collector to Base Voltage, V
TOTAL POWER DISSIPATION vs.
PARAMETERS
Ambient Temperature, T
25
AMBIENT TEMPERATURE
2
Q2
Q1
2 Elements in total
50
Mounted on Glass Epoxy PCB
(1.08 cm
2
4
x 1.0 mm(t) glass epoxy PCB
Q1
75
2
x 1.0 mm (t) )
6
1
100
A
f = 1 MHz
UNITS
8
CB
(°C)
mW
mA
125
°C
°C
V
V
V
(V)
1,2
10
150
-65 to +150
180
150
RATINGS
Q1
30
210 Total
9
6
2
(T
(T
A
A
= 25°C)
= 25°C)
5.5
100
1.5
192
150
Q2
9
ORDERING INFORMATION
PART NUMBER
UPA862TD-T3-A
1.0
0.8
0.6
0.4
0.2
0
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Collector to Base Voltage, V
2
10K Pcs./Reel
QUANTITY
4
Q2
6
f = 1 MHz
CB
8
(V)
PACKAGING
Tape & Reel
10