UPA862TD-A CEL, UPA862TD-A Datasheet - Page 3

• Manufacturer Part Number: UPA862TD-A
• Description: TRANSISTOR NPN DUAL TD
• Manufacturer: CEL

Specifications of UPA862TD-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 6V, 5.5V
• Frequency - Transition: 12GHz, 6.5GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 2GHz
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 10mA, 3V / 100 @ 5mA, 1V
• Current - Collector (ic) (max): 30mA, 100mA
• Mounting Type: Surface Mount
• Package / Case: TD
• Dc Collector/base Gain Hfe Min: 150
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
0.0001
0.0001
0.001
0.001
0.01
0.01
100
100
0.1
0.1
10
10
1
40
30
20
10
1
0.4
0.4
0
V
COLLECTOR TO EMITTER VOLTAGE
V
CE
CE
Collector to Emitter Voltage, V
Base to Emitter Voltage, V
= 2 V
Base to Emitter Voltage, V
= 1 V
BASE TO EMITTER VOLTAGE
BASE TO EMITTER VOLTAGE
1
0.5
0.5
COLLECTOR CURRENT vs.
COLLECTOR CURRENT vs.
COLLECTOR CURRENT vs.
2
0.6
0.6
3
0.7
0.7
Q1
4
300 µa
5
0.8
0.8
6
BE
BE
240 µa
240 µa
180 µa
150 µa
120 µa
90 µa
60 µa
I
270 µa
B
0.9
0.9
= 30 µa
CE
(V)
(V)
7
(V)
1.0
1.0
8
(T
A
= 25°C)
0.0001
0.0001
0.001
0.001
0.01
0.01
100
100
60
50
40
30
20
10
0.1
0.1
10
10
0
1
1
0.4
0.4
COLLECTOR TO EMITTER VOLTAGE
V
V
CE
CE
Collector to Emitter Voltage, V
Base to Emitter Voltage, V
Base to Emitter Voltage, V
BASE TO EMITTER VOLTAGE
= 1 V
BASE TO EMITTER VOLTAGE
= 2 V
1
0.5
0.5
COLLECTOR CURRENT vs.
COLLECTOR CURRENT vs.
COLLECTOR CURRENT vs.
2
0.6
0.6
3
Q2
0.7
0.7
4
400 µa
360 µa
5
0.8
0.8
320 µa
280 µa
6
BE
BE
240 µa
200 µa
120 µa
I
0.9
0.9
160 µa
80 µa
CE
B
(V)
(V)
= 40 µa
7
(V)
1.0
1.0
8