BFR 92P E6327 Infineon Technologies, BFR 92P E6327 Datasheet

TRANSISTOR RF NPN 15V SOT-23

BFR 92P E6327

Manufacturer Part Number
BFR 92P E6327
Description
TRANSISTOR RF NPN 15V SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFR 92P E6327

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain
10.5dB ~ 16dB
Power - Max
280mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 15mA, 8V
Current - Collector (ic) (max)
45mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
70 @ 15 mA @ 8 V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
5000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.045 A
Power Dissipation
280 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFR 92P E6327
BFR92PE6327INTR
BFR92PE6327XT
SP000011062
NPN Silicon RF Transistor*
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR92P
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation-
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
Pb-containing package may be available upon special request
For calculation of R
S
For broadband amplifiers up to 2 GHz and
Complementary type: BFT91 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
fast non-saturated switches at collector currents
from 0.5 mA to 20 mA
48 °C
thJA
please refer to Application Note Thermal Resistance
2)
Marking
GFs
1)
1=B
1
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
Pin Configuration
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
2=E
3
3=C
-65 ... 150
-65 ... 150
Value
Value
280
150
2.5
15
20
20
45
365
4
Package
SOT23
2007-04-26
BFR92P
1
Unit
V
mA
mW
°C
Unit
K/W
2

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BFR 92P E6327 Summary of contents

Page 1

NPN Silicon RF Transistor* For broadband amplifiers GHz and fast non-saturated switches at collector currents from 0 Complementary type: BFT91 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 * Short term description ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...

Page 4

... MJS = 3 - XTI = All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www ...

Page 5

Total power dissipation P 300 mW 200 150 100 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 0.05 1 ...

Page 6

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 7

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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