BFR 92W E6327 Infineon Technologies, BFR 92W E6327 Datasheet - Page 3

• Manufacturer Part Number: BFR 92W E6327
• Description: TRANSISTOR NPN RF 15V SOT-323
• Manufacturer: Infineon Technologies

Specifications of BFR 92W E6327

• Package / Case: SOT-323
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
• Gain: 11.5dB ~ 17dB
• Power - Max: 280mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 15mA, 8V
• Current - Collector (ic) (max): 45mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 280 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR92WE6327; BFR92WE6327XT; SP000011065

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 900 MHz
I
f = 1.8 GHz
Power gain, maximum available
I
f = 900 MHz
I
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
I
f = 1.8 MHz
1
C
C
C
C
C
C
C
G ma = | S 21e / S 12e | (k-(k²-1) 1/2 )
CB
CE
EB
= 15 mA, V
= 2 mA, V
= 2 mA, V
= 15 mA, V
= 15 mA, V
= 15 mA, V
= 15 mA, V
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
CE
CE
CE
CE
CE
CE
CE
= 6 V, Z
= 6 V, Z
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
S
S
BE
BE
S
S
S
S
CB
= Z
= Z
= Z
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt
Sopt
Sopt
L
L
A
1)
= 50
= 50
,
,
= 25°C, unless otherwise specified
, Z
, Z
L
L
= Z
= Z
,
,
Lopt
Lopt
,
,
3
Symbol
f
C
C
C
F
G
|S
T
cb
ce
eb
ma
21e
|
2
min.
3.5
-
-
-
-
-
-
-
-
-
Values
11.5
13.5
0.42
0.27
0.66
typ.
1.4
17
5
2
8
max.
0.6
2007-03-30
-
-
-
-
-
-
-
-
-
BFR92W
Unit
GHz
pF
dB
dB