BFS17SE6327 Infineon Technologies, BFS17SE6327 Datasheet - Page 3
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BFS17SE6327
Manufacturer Part Number
BFS17SE6327
Description
DUAL NPN TRANS RADIO FREQ BROAD
Manufacturer
Infineon Technologies
Datasheet
1.BFS17SE6327.pdf
(7 pages)
Specifications of BFS17SE6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1.4GHz
Noise Figure (db Typ @ F)
3dB ~ 5dB @ 800MHz
Power - Max
280mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 2mA, 1V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Other names
BFS17SE6327XT
BFS17SE6327XT
SP000011081
BFS17SE6327XT
SP000011081
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 800 MHz
Transducer gain
I
f = 500 MHz
Third order intercept point at output
V
Z
1dB Compression point
I
f = 800 MHz
C
C
C
C
C
S
CB
CE
EB
CE
= 2 mA, V
= 25 mA, V
= 2 mA, V
= 20 mA, V
= 20 mA, V
= Z
= 0.5 V, f = 1 MHz, V
= 5 V, f = 1 MHz, V
= 5 V, f = 1 MHz, V
= 5 V, I
Sopt
, Z
C
CE
CE
L
CE
CE
= 20 mA, f = 800 MHz,
CE
= Z
= 5 V, f = 200 MHz
= 5 V, Z
= 5 V, f = 200 MHz
= 5 V, Z
= 5 V, Z
Lopt
BE
BE
S
S
S
CB
= 50
= 0 ,
= 0 ,
= Z
= Z
= 0 ,
L
L
A
= 50 ,
= 50 ,
,
= 25°C, unless otherwise specified
3
Symbol
f
C
C
C
F
|S
IP
P
T
cb
ce
eb
-1dB
21e
3
|
2
min.
1.3
1
-
-
-
-
-
-
-
Values
22.5
0.55
typ.
1.4
2.5
0.2
0.9
14
11
3
2007-03-30
max.
1.45
0.8
5
-
-
-
-
-
-
BFS17S
Unit
GHz
pF
dB
dB
dBm
-