BFR 183 E6327 Infineon Technologies, BFR 183 E6327 Datasheet - Page 6
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BFR 183 E6327
Manufacturer Part Number
BFR 183 E6327
Description
TRANSISTOR RF NPN 12V SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BFR_183_E6327.pdf
(7 pages)
Specifications of BFR 183 E6327
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain
17.5dB
Power - Max
450mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 15mA, 8V
Current - Collector (ic) (max)
65mA
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
450 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR183E6327XT
SP000011054
SP000011054
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.4
1) Lead width can be 0.6 max. in dambar area
0.25
+0.1
-0.05
1)
Package SOT23
M
Pin 1
B C
2.9
1
1.9
4
±0.1
EH
0.8
3
3.15
2
0.95
0.9
C
0.8
1.2
B
s
6
Manufacturer
2005, June
Date code (YM)
BCW66
Type code
0.2
1.15
0.2
M
A
1
±0.1
0.1 MAX.
A
2007-03-30
BFR183