BFR 181W H6327 Infineon Technologies, BFR 181W H6327 Datasheet
BFR 181W H6327
Specifications of BFR 181W H6327
Related parts for BFR 181W H6327
BFR 181W H6327 Summary of contents
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NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0 • GHz 0 900 MHz T min ESD ( E lectro s tatic ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...
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Total power dissipation P 200 mW 160 140 120 100 Permissible Pulse Load = ƒ totmax totDC 0.005 0.01 ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT323 2 ±0.2 0.1 MAX. +0.1 3x 0.3 -0.05 0 0.65 0.65 0.2 0.6 ...
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... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...