BFR 181W H6327 Infineon Technologies, BFR 181W H6327 Datasheet - Page 3

• Manufacturer Part Number: BFR 181W H6327
• Description: TRANS RF NPN 12V 20MA SOT323
• Manufacturer: Infineon Technologies

Specifications of BFR 181W H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
• Gain: 19dB
• Power - Max: 175mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 8V
• Current - Collector (ic) (max): 20mA
• Mounting Type: Surface Mount
• Package / Case: SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR181WH6327XT

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Minimum noise figure
I
f = 900 MHz
I
f = 1.8 GHz
Power gain, maximum stable
I
f = 900 MHz
Power gain, maximum available
I
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
I
f = 1.8 MHz
1
2
C
C
C
C
C
C
C
G
G ma = |S 21e / S 12e | (k-(k²-1) 1/2 )
CB
CE
EB
ms
= 10 mA, V
= 2 mA, V
= 2 mA, V
= 5 mA, V
= 5 mA, V
= 5 mA, V
= 5 mA, V
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= |S
21
/ S
CE
CE
CE
CE
CE
CE
12
CE
|
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, f = 500 MHz
S
S
S
S
S
S
BE
BE
CB
= Z
= Z
= Z
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt
1)
Sopt
Sopt
L
L
= 50 Ω ,
= 50 Ω ,
A
2)
,
,
, Z
, Z
= 25°C, unless otherwise specified
L
L
= Z
= Z
Lopt
Lopt
,
,
3
Symbol
f
C
C
C
NF
G
G
|S
T
cb
ce
eb
ms
ma
21e
min
|
2
min.
6
-
-
-
-
-
-
-
-
-
Values
15.5
0.29
0.22
0.35
13.5
typ.
0.9
1.2
10
19
8
max.
0.45
BFR181W
2010-10-08
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dB
dB
dB