BFR 35AP E6327 Infineon Technologies, BFR 35AP E6327 Datasheet - Page 2

• Manufacturer Part Number: BFR 35AP E6327
• Description: TRANSISTOR RF NPN 15V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BFR 35AP E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
• Gain: 10.5dB ~ 16dB
• Power - Max: 280mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 15mA, 8V
• Current - Collector (ic) (max): 45mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 280 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR35APE6327XT; SP000011060

Electrical Characteristics at T
DC Characteristics
Collector-base cutoff current
V
DC current gain-
I
Parameter
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Emitter-base cutoff current
V
C
C
CB
CE
EB
= 15 mA, V
= 1 mA, I
= 10 V, I
= 2.5 V, I
= 20 V, V
B
E
CE
= 0
C
BE
= 0
= 0
= 8 V, pulse measured
= 0
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
15
70
-
-
-
Values
typ.
100
-
-
-
-
max.
100
100
140
10
BFR35AP
2007-03-30
-
V
µA
nA
µA
-
Unit