BFR 35AP E6327 Infineon Technologies, BFR 35AP E6327 Datasheet - Page 4

• Manufacturer Part Number: BFR 35AP E6327
• Description: TRANSISTOR RF NPN 15V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BFR 35AP E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
• Gain: 10.5dB ~ 16dB
• Power - Max: 280mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 15mA, 8V
• Current - Collector (ic) (max): 45mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 280 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR35APE6327XT; SP000011060

Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.4
1) Lead width can be 0.6 max. in dambar area
0.25
+0.1
-0.05
1)
Package SOT23
M
Pin 1
B C
2.9
1
1.9
4
±0.1
EH
0.8
3
3.15
2
0.95
0.9
C
0.8
1.2
B
s
4
Manufacturer
2005, June
Date code (YM)
BCW66
Type code
0.2
1.15
0.2
M
A
1
±0.1
0.1 MAX.
A
BFR35AP
2007-03-30