BFP 520 H6327 Infineon Technologies, BFP 520 H6327 Datasheet - Page 2
BFP 520 H6327
Manufacturer Part Number
BFP 520 H6327
Description
TRANS RF NPN 2.5V 40MA SOT343
Manufacturer
Infineon Technologies
Datasheet
1.BFP520E6327.pdf
(10 pages)
Specifications of BFP 520 H6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
3.5V
Frequency - Transition
45GHz
Noise Figure (db Typ @ F)
0.95dB @ 1.8GHz
Gain
24dB
Power - Max
100mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 20mA, 2V
Current - Collector (ic) (max)
40mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
C
C
For calculation of R
CE
CE
CB
EB
= 1 mA, I
= 20 mA, V
= 0.5 V, I
= 2 V, V
= 10 V, V
= 2 V, I
B
E
BE
= 0
C
= 0
CE
BE
= 0
= 0
thJA
= 2 V, pulse measured
= 0
please refer to Application Note AN077 Thermal Resistance
1)
A
= 25°C, unless otherwise specified
Symbol
R
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
thJS
min.
2.5
70
-
-
-
-
Values
Value
110
typ.
100
450
3
1
-
-
max.
1000
3000
2010-08-16
3.5
170
30
30
BFP520
Unit
V
nA
-
Unit
K/W