BFP 520 H6327 Infineon Technologies, BFP 520 H6327 Datasheet - Page 6

• Manufacturer Part Number: BFP 520 H6327
• Description: TRANS RF NPN 2.5V 40MA SOT343
• Manufacturer: Infineon Technologies

Specifications of BFP 520 H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Frequency - Transition: 45GHz
• Noise Figure (db Typ @ F): 0.95dB @ 1.8GHz
• Gain: 24dB
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (ic) (max): 40mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Noise figure F =
V
Source impedance for min.
noise figure vs. frequency
V
CE
CE
dB
= 2 V, f = 1.8 GHz
1.5
0.5
= 2 V, I
0
3
2
1
0
+j10
0
-j10
5
+j25
10
-j25
C
= 2 mA / 5 mA
10
25
6GHz
5GHz
(I
15
C
4GHz
)
Zs = 50Ohm
Zs = Zsopt
50
+j50
-j50
20
3GHz
100
25
2mA
5mA
30
1.8GHz
0.45GHz
+j100
-j100
mA
0.9GHz
I
C
40
Minimum noise figure NF
V
CE
dB
= 2 V, Z
1.5
0.5
3
2
1
0
0
1
S
= Z
2
Sopt
3
IC = 5 mA
IC = 2 mA
min
4
2010-08-16
=
5 GHz
(f)
BFP520
f
6.5