BFP 420F H6327 Infineon Technologies, BFP 420F H6327 Datasheet
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BFP 420F H6327
Specifications of BFP 420F H6327
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BFP 420F H6327 Summary of contents
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NPN Silicon RF Transistor* For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59 mm Noise figure 1.8 GHz outstanding 1.8 GHz ms Transition frequency f = ...
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Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...
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... L LXI coupling coefficients between the inductances L referencepin for the couple ports are B`, E`, C For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes - ...
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For non-linear simulation: · Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. · If you need simulation of the reverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. · Simulation of ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-4 1.4 ±0.05 0.55 ±0.04 0.2 ±0. 0.2 0.15 ±0.05 ±0.05 0.5 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...