BFP 420F H6327 Infineon Technologies, BFP 420F H6327 Datasheet - Page 5
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BFP 420F H6327
Manufacturer Part Number
BFP 420F H6327
Description
TRANS RF NPN 4.5V 35MA TSFP-4
Manufacturer
Infineon Technologies
Datasheet
1.BFP_420F_E6327.pdf
(7 pages)
Specifications of BFP 420F H6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
25GHz
Noise Figure (db Typ @ F)
1.1dB @ 1.8GHz
Gain
19.5dB
Power - Max
160mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 4V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
TSFP-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For non-linear simulation:
· Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
· If you need simulation of the reverse characteristics, add the diode with the
· Simulation of package is not necessary for frequencies < 100MHz.
Note:
· This transistor is constructed in a common emitter configuration. This feature causes
The common emitter configuration shows the following advantages:
· Higher gain because of lower emitter inductance.
· Power is dissipated via the grounded emitter leads, because the chip is mounted
Please note, that the broadest lead is the emitter lead.
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
on copper emitter leadframe.
C'-E'- diode data between collector and emitter.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Transistor Schematic Diagram
B
E
E
EHA07307
5
C
2007-04-20
BFP420F