BFQ 19S E6327 Infineon Technologies, BFQ 19S E6327 Datasheet - Page 3

• Manufacturer Part Number: BFQ 19S E6327
• Description: TRANSISTOR RF NPN 15V SOT-89
• Manufacturer: Infineon Technologies

Specifications of BFQ 19S E6327

• Package / Case: SOT-89
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5.5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
• Gain: 7dB ~ 11.5dB
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 70mA, 8V
• Current - Collector (ic) (max): 210mA
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 5.5 GHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Continuous Collector Current: 0.21 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFQ19SE6327XT; SP000011042

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 900 MHz
f = 1.8 GHz
Power gain, maximum available
I
f = 900 MHz
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
f = 1.8 GHz
Third order intercept point at output
V
f = 1.8 GHz
1
C
C
C
C
G
CB
CE
EB
CE
ma
= 70 mA, V
= 20 mA, V
= 70 mA, V
= 30 mA, V
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 8 V, I
= |S
21
/S
C
12
CE
CE
CE
CE
= 70 mA, Z
| (k-(k
= 8 V, f = 500 MHz
= 6 V, Z
= 8 V, Z
= 8 V, Z
2
-1)
1/2
)
BE
BE
S
S
S
S
CB
= Z
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt,
L
Sopt
A
= 50 Ω ,
1)
= 25°C, unless otherwise specified
,
, Z
Z
L
L
= Z
= Z
Lopt
Lopt
,
,
3
Symbol
f
C
C
C
F
G
|S
IP
T
cb
ce
eb
ma
21e
3
|
2
min.
4
-
-
-
-
-
-
-
-
-
-
Values
11.5
1.05
typ.
5.5
0.4
3.9
1.8
9.5
32
3
4
7
max.
1.35
2010-03-12
-
-
-
-
-
-
-
-
-
-
BFQ19S
Unit
GHz
pF
dB
dB
dBm