BFQ 19S E6327 Infineon Technologies, BFQ 19S E6327 Datasheet - Page 4

• Manufacturer Part Number: BFQ 19S E6327
• Description: TRANSISTOR RF NPN 15V SOT-89
• Manufacturer: Infineon Technologies

Specifications of BFQ 19S E6327

• Package / Case: SOT-89
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5.5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
• Gain: 7dB ~ 11.5dB
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 70mA, 8V
• Current - Collector (ic) (max): 210mA
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 5.5 GHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Continuous Collector Current: 0.21 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFQ19SE6327XT; SP000011042

Total power dissipation P
Permissible Pulse Load
P
totmax
mW
1200
1000
10
10
10
900
800
700
600
500
400
300
200
100
-
0
2
1
0
10
0
/P
-7
totDC
20
10
-6
= ƒ (t
40
10
-5
p
60
)
10
-4
80
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
tot
-3
100
= ƒ (T
10
-2
120 °C
S
)
t
s
T
p
S
150
10
0
4
Permissible Pulse Load R
K/W
10
10
10
2
1
0
10
-7
10
-6
10
-5
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
-4
10
thJS
-3
10
2010-03-12
= ƒ (t
-2
BFQ19S
t
s
p
p
)
10
0