BGR 420 H6327 Infineon Technologies, BGR 420 H6327 Datasheet - Page 4

• Manufacturer Part Number: BGR 420 H6327
• Description: TRANS RF NPN 13V 25MA SOT343
• Manufacturer: Infineon Technologies

Specifications of BGR 420 H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 13V
• Noise Figure (db Typ @ F): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
• Power - Max: 120mW
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Frequency - Transition: -
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Lead Free Status / Rohs Status: Details

1
Features
•
•
•
•
•
* Short term description
Applications
•
2
The BGR420 is a monolithic silicon amplifier with a NPN silicon RF transistor and integrated resistors for biasing.
Type
BGR420
Note: ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Figure 1
Note: Due to design there is an additional diode between emitter and collector, which does not affect normal
Data Sheet
Noise figure
Gain
On chip bias circuitry, 13 mA bias current at
V
SIEGET ® 25 GHz
Pb-free (RoHS compliant) package
LNAs
BB
operation for common emitter configuration.
= 2.8 V
S
21
= 26 dB at 0.4 GHz
NPN Silicon RF Transistor With Bias Circuitry*
Description
Circuit diagram
NF
= 1.5 dB at 0.4 GHz
f
T
-Line
Package
SOT343
V
CC
= 3.6 V;
4
NPN Silicon RF Transistor With Bias Circuitry*
Marking
AWs
4
3
Rev. 1.0, 2008-06-06
1
2
BGR420