BGR 420 H6327 Infineon Technologies, BGR 420 H6327 Datasheet - Page 5

• Manufacturer Part Number: BGR 420 H6327
• Description: TRANS RF NPN 13V 25MA SOT343
• Manufacturer: Infineon Technologies

Specifications of BGR 420 H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 13V
• Noise Figure (db Typ @ F): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
• Power - Max: 120mW
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Frequency - Transition: -
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Lead Free Status / Rohs Status: Details

Table 1
Pin
1
2
3
4
2.1
Note: All Voltages refer to GND-node
Table 2
Parameter
Current at pin VCC
Voltage at pin VCC
Current at pin VBB
Voltage at pin VBB
Current at pin RFIN
Voltage at pin RFIN
Total power dissipation
T
Operation junction temperature range
Storage junction temperature range
1)
Note: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to
2.2
Table 3
Parameter
Junction - soldering point
1) For calculation of
Data Sheet
S
= 115 °C
T
S
absolute maximum rating conditions even only for a short moment may affect device reliability. Maximum
ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the
integrated circuit. Absolute maximum ratings typically differ heavily from recommended operation conditions
is measured on the emitter (GND) lead at the soldering point to the pcb
Pinning table
Maximum Ratings
Maximum ratings
Thermal Resistance
Thermal Resistance
R
thJA
1)
please refer to Application Note Thermal Resistance.
1)
Function
RFIN
GND
RFOUT (VCC)
VBB
Symbol
I
V
I
V
I
V
P
T
T
Symbol
R
CC
BB
IN
jo
jstg
CC
BB
IN
tot
thJS
5
Value
25
13
2.2
8
3
5
120
-65... 150
-65... 150
Value
290
Unit
mA
V
mA
V
mA
V
mW
°C
°C
Unit
K/W
Rev. 1.0, 2008-06-06
Description
BGR420