BFP 620F H7764 Infineon Technologies, BFP 620F H7764 Datasheet
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BFP 620F H7764
Specifications of BFP 620F H7764
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BFP 620F H7764 Summary of contents
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NPN Silicon Germanium RF Transistor* High gain low noise RF transistor Small package 1.4 x 0.8 x 0.59 mm Outstanding noise figure 1.8 GHz Outstanding noise figure GHz Maximum ...
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Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 1 GHz C CE Collector-base capacitance MHz ...
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SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: 0. 1000 V VAF = VAR = 2.707 RBM = 250.7 fF CJE = 1. ...
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Total power dissipation P tot 200 mW 160 140 120 100 105 120 ° Permissible Pulse Load totmax totDC ...
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Third order Intercept Point IP (Output = parameter, f =1.8GHz CE 30 dBm Power gain ...
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Power gain 50mA Parameter in GHz 0.2 0.6 1 1.4 Noise figure ...
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Source impedance for min. noise figure vs. frequency V = 1.5V 5.0mA/50.0mA 1.5 0.5 0.4 0.3 0.2 2.4GHz 1.8GHz 3GHz 0.1 0.1 0.2 0.3 0.4 0 4GHz 5GHz −0.1 6GHz −0.2 ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-4 1.4 ±0.05 0.55 ±0.04 0.2 ±0. 0.2 0.15 ±0.05 ±0.05 0.5 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...