BFP 620F E7764 Infineon Technologies, BFP 620F E7764 Datasheet

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BFP 620F E7764

Manufacturer Part Number
BFP 620F E7764
Description
TRANSISTOR RF NPN 2.3V TSFP-4
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP 620F E7764

Package / Case
TSFP-4
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
2.8V
Frequency - Transition
65GHz
Noise Figure (db Typ @ F)
0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain
21dB
Power - Max
185mW
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 50mA, 1.5V
Current - Collector (ic) (max)
80mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
110 @ 50mA @ 1.5V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
65000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
2.3 V
Emitter- Base Voltage Vebo
1.2 V
Continuous Collector Current
0.08 A
Power Dissipation
185 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFP620FE7764XT
SP000012989
NPN Silicon Germanium RF Transistor*
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP620F
Maximum Ratings
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
1
2
Pb-containing package may be available upon special request
T S is measured on the collector lead at the soldering point to the pcb
A
A
S
High gain low noise RF transistor
Small package 1.4 x 0.8 x 0.59 mm
Outstanding noise figure F = 0.7 dB at 1.8 GHz
Maximum stable gain
Gold metallization for extra high reliability
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Outstanding noise figure F = 1.3 dB at 6 GHz
G
G
> 0 °C
ms
ma
0 °C
96°C
= 21 dB at 1.8 GHz
= 10 dB at 6 GHz
Marking
R2s
2)
1=B
1)
2=E
Pin Configuration
3=C
1
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
4=E
-
Direction of Unreeling
-65 ... 150
-65 ... 150
-
Value
185
150
4
2.3
2.1
7.5
7.5
1.2
80
Top View
3
3
4
1
XYs
Package
TSFP-4
3
2
2007-04-20
1
BFP620F
2
Unit
V
mA
mW
°C

Related parts for BFP 620F E7764

BFP 620F E7764 Summary of contents

Page 1

NPN Silicon Germanium RF Transistor* High gain low noise RF transistor Small package 1.4 x 0.8 x 0.59 mm Outstanding noise figure 1.8 GHz Outstanding noise figure GHz Maximum ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 1 GHz C CE Collector-base capacitance MHz ...

Page 4

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: 0. 1000 V VAF = VAR = 2.707 RBM = 250.7 fF CJE = 1. ...

Page 5

Total power dissipation P tot 200 mW 160 140 120 100 105 120 ° Permissible Pulse Load totmax totDC ...

Page 6

Third order Intercept Point IP (Output = parameter, f =1.8GHz CE 30 dBm Power gain ...

Page 7

Power gain 50mA Parameter in GHz 0.2 0.6 1 1.4 Noise figure ...

Page 8

Source impedance for min. noise figure vs. frequency V = 1.5V 5.0mA/50.0mA 1.5 0.5 0.4 0.3 0.2 2.4GHz 1.8GHz 3GHz 0.1 0.1 0.2 0.3 0.4 0 4GHz 5GHz −0.1 6GHz −0.2 ...

Page 9

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-4 1.4 ±0.05 0.55 ±0.04 0.2 ±0. 0.2 0.15 ±0.05 ±0.05 0.5 ...

Page 10

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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