BLS2731-10,114 NXP Semiconductors, BLS2731-10,114 Datasheet - Page 6

• Manufacturer Part Number: BLS2731-10,114
• Description: TRANSISTOR RF POWER SOT445C
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-10,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 75V
• Frequency - Transition: 3.1GHz
• Gain: 10dB
• Power - Max: 145W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 250mA, 5V
• Current - Collector (ic) (max): 1.5A
• Mounting Type: Surface Mount
• Package / Case: SOT-445C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Other names: 934045790114; BLS2731-10 TRAY; BLS2731-10 TRAY

Philips Semiconductors
1998 Nov 25
handbook, full pagewidth
Microwave power transistor
Dimensions in mm.
The components are located on one side of the copper-clad printed circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
The striplines are on double-clad printed-circuit board with Duroid dielectric (
Fig.8
40
input
50
Component layout for 2.7 to 3.1 GHz class-C test circuit.
30
C1
6
r
= 2.2); thickness = 0.38 mm.
C2
C5
30
C3
MGR729
C4
output
50
BLS2731-10
Product specification