BLS2731-10,114 NXP Semiconductors, BLS2731-10,114 Datasheet - Page 8

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BLS2731-10,114

Manufacturer Part Number
BLS2731-10,114
Description
TRANSISTOR RF POWER SOT445C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLS2731-10,114

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
75V
Frequency - Transition
3.1GHz
Gain
10dB
Power - Max
145W
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 250mA, 5V
Current - Collector (ic) (max)
1.5A
Mounting Type
Surface Mount
Package / Case
SOT-445C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure (db Typ @ F)
-
Other names
934045790114
BLS2731-10 TRAY
BLS2731-10 TRAY
Philips Semiconductors
PACKAGE OUTLINE
1998 Nov 25
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
Microwave power transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT445C
5.57
4.70
A
H
3.15
2.95
U 2
A
A
b
0.15
0.09
c
IEC
8.13
7.87
D
7.65
7.35
D 1
8.15
7.85
JEDEC
D 2
D 1
D 2
U 1
D
q
b
REFERENCES
4.20
3.93
3
E
0
1
2
4.25
3.95
E 1
w 2
M
scale
EIAJ
5.31
5.01
E 2
8
5
C
p
C
1.82
1.22
F
10 mm
15.84
14.64
w 1
F
B
H
M
A B
3.35
3.05
p
3.33
3.03
Q
E 2
PROJECTION
EUROPEAN
E 1
14.22
q
20.47
20.17
U 1
Q
c
BLS2731-10
Product specification
5.18
4.98
U 2
ISSUE DATE
97-05-23
0.51
E
w 1
SOT445C
1.02
w 2

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