BFG 196 E6327 Infineon Technologies, BFG 196 E6327 Datasheet
BFG 196 E6327
Specifications of BFG 196 E6327
BFG196E6327XT
SP000010995
Related parts for BFG 196 E6327
BFG 196 E6327 Summary of contents
Page 1
NPN Silicon RF Transistor* For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from Power amplifier for DECT and PCN systems f = 7.5 GHz, ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
Page 3
Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...
Page 4
Total power dissipation P tot 900 mW 700 600 500 400 300 200 100 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 ...
Page 5
Package Outline A 0.7 Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0.2 3 ±0 2.3 ±0.1 4.6 0. ...
Page 6
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...