BFG 19S E6327 Infineon Technologies, BFG 19S E6327 Datasheet

BFG 19S E6327

Manufacturer Part Number

BFG 19S E6327

Description

TRANSISTOR RF NPN 15V SOT-223

Manufacturer

Infineon Technologies

Datasheet

1.BFG_19S_E6327.pdf (6 pages)

Specifications of BFG 19S E6327

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

15V

Frequency - Transition

5.5GHz

Noise Figure (db Typ @ F)

2dB ~ 3dB @ 900MHz ~ 1.8GHz

Gain

14dB ~ 8.5dB

Power - Max

Dc Current Gain (hfe) (min) @ Ic, Vce

70 @ 70mA, 8V

Current - Collector (ic) (max)

210mA

Mounting Type

Surface Mount

Configuration

Single Dual Emitter

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Maximum Operating Frequency

5.5 GHz

Collector- Emitter Voltage Vceo Max

15 V

Continuous Collector Current

0.1 A

Power Dissipation

1 W

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

BFG19SE6327T
BFG19SE6327XT
SP000010992

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NPN Silicon RF Transistor*

• For low noise, low distortion broadband

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFG19S

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point

Pb-containing package may be available upon special request

T S is measured on the collector lead at the soldering point to the pcb

For calculation of R

amplifiers in antenna and telecommunication

systems up to 1.5 GHz at collector currents

from 10 mA to 70 mA

≤ 75°C

thJA

Marking

BFG19S 1 = E 2 = B 3 = E 4 = C -

please refer to Application Note Thermal Resistance

Pin Configuration

Symbol

CEO

CES

CBO

EBO

tot

stg

thJS

-65 ... 150

Value

≤ 75

210

150

Package

SOT223

2008-07-10

BFG19S

Unit

°C

Unit

K/W

Related parts for BFG 19S E6327

BFG 19S E6327 Summary of contents

Page 1

NPN Silicon RF Transistor* • For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from • Pb-free (RoHS compliant) package • Qualified according AEC Q101 ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...

Page 4

Total power dissipation P tot 1200 mW 1000 900 800 700 600 500 400 300 200 100 Permissible Pulse Load = ƒ totmax totDC ...

Page 5

Package Outline A 0.7 Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0.2 3 ±0 2.3 ±0.1 4.6 0. ...

Page 6

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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