BFG 19S E6327 Infineon Technologies, BFG 19S E6327 Datasheet - Page 5

• Manufacturer Part Number: BFG 19S E6327
• Description: TRANSISTOR RF NPN 15V SOT-223
• Manufacturer: Infineon Technologies

Specifications of BFG 19S E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5.5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 900MHz ~ 1.8GHz
• Gain: 14dB ~ 8.5dB
• Power - Max: 1W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 70mA, 8V
• Current - Collector (ic) (max): 210mA
• Mounting Type: Surface Mount
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 5.5 GHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BFG19SE6327T; BFG19SE6327XT; SP000010992

Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
Pin 1
0.7
A
0.25
±0.1
Pin 1
Package SOT223
M
1
A
1.2
6.5
8
3
1.1
4.6
±0.1
±0.2
2
6.8
3.5
2.3
5
4
3
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Manufacturer
0.3 MAX.
0.1 MAX.
0.25
1.75
M
B
1.6
±0.1
B
2008-07-10
BFG19S