BFR 360L3 E6327 Infineon Technologies, BFR 360L3 E6327 Datasheet

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NPN Silicon RF Transistor* Low voltage/ Low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1 1.8 GHz Pb-free (RoHS compliant) package Qualified according AEC Q101 ...

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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

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... All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit Transistor B’ For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com BF = 147 IKF = 77. IKR = 0 0 78.2 VJE = 1 ...

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Total power dissipation P 240 mW 180 150 120 Permissible Pulse Load totmax totDC D=0 0.005 0.01 0.02 0.05 0.1 ...

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Third order Intercept Point IP (Output = parameter 1.8 GHz CE 30 dBm Power gain ...

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Power Gain parameter Ic=15mA 0. Power Gain ...

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Package Outline Top view Pin 1 marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.225 0.15 Copper Marking Layout (Example) Standard Packing Reel ø180 mm = ...

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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...