BFR 360L3 E6327 Infineon Technologies, BFR 360L3 E6327 Datasheet - Page 4

• Manufacturer Part Number: BFR 360L3 E6327
• Description: TRANSISTOR RF NPN 6V TSLP-3
• Manufacturer: Infineon Technologies

Specifications of BFR 360L3 E6327

• Package / Case: TSFP-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 9V
• Frequency - Transition: 14GHz
• Noise Figure (db Typ @ F): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
• Gain: 11.5dB ~ 16dB
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 15mA, 3V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 210 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR360L3E6327XT; SP000013560

IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
AF =
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
B
C
6
0.0689
20
2.4
60
1.4
7.31
400
9.219
1.336
0.864
1.92
0
0
1
L
2
B’
C
fA
V
-
V
-
fF
ps
mA
V
ns
-
-
-
2
Transistor
Chip
C
E
4
E’
C
L
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
KF =
1
1
C
3
C’
C
147
77.28
6
0.3
0.1
78.2
1.3
0.115
0
0.486
0
0
0.954
1E-14
7
L
3
R
4
1
EHA07536
C
m
-
-
mA
-
A
V
-
deg
fF
-
5
C
L
L
L
C
C
C
C
C
C
C
R
Valid up to 6GHz
1
2
3
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
NK =
1
2
3
4
5
6
7
1
=
=
=
=
=
=
=
=
=
=
=
1
150
1
20
74
0.35
0.5
0.198
473
0.129
0.75
1.11
0.5
0.575
0.575
0.275
33
28
131
8
8
24
300
204
BFR360L3
2007-03-30
-
fA
-
fA
µA
-
V
fF
-
V
eV
K
nH
nH
nH
fF
fF
fF
fF
fF
fF
fF