BGB 540 E6327 Infineon Technologies, BGB 540 E6327 Datasheet - Page 10

• Manufacturer Part Number: BGB 540 E6327
• Description: TRANSISTOR RF ACT BIAS SOT-343
• Manufacturer: Infineon Technologies

Specifications of BGB 540 E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
• Gain: 16dB ~ 17.5dB
• Power - Max: 120mW
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Other names: BGB540E6327XT; SP000013194

Data sheet
Typical Application
Package Outline
V
Bias
0.3
+0.1
RF In
R
BGB420
I
C
Bias
Bias
1
4
1
4
DC Bypass
1.3
2
±0.2
±0.1
L
I
C
3
2
3
2
0.6
+0.1
C
B
acc. to
DIN 6784
I
0.20
+0.2
C
Voltage
Supply
=10*I
RF Out
M
10
B
Bias
Fig. 3: Typical application circuit.
This
how to use the BGB420 as a
Self-Biased Transistor. As for a
discrete
circuits have to be applied. A
good starting point for various
applications are the Application
Notes provided for the BFP420.
0.20
0.1 max
0.9
proposal
0.15
M
±0.1
A
Transistor
+0.1
-0.05
GPS05605
A
demonstrates
matching
2001-08-10
BGB420