BGB 540 E6327 Infineon Technologies, BGB 540 E6327 Datasheet - Page 4

• Manufacturer Part Number: BGB 540 E6327
• Description: TRANSISTOR RF ACT BIAS SOT-343
• Manufacturer: Infineon Technologies

Specifications of BGB 540 E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 3.5V
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
• Gain: 16dB ~ 17.5dB
• Power - Max: 120mW
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Other names: BGB540E6327XT; SP000013194

BGB420 Active Biased Transistor
Features
• For high gain low noise amplifiers
• Ideal for wideband applications, cellular telephones,
• G
• Small SOT343 package
• Current easy adjustable by an external resistor
• Open collector output
• Typical supply voltage: 1.4-3.3V
• SIEGET
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BGB420
Data sheet
cordless telephones, SAT-TV and high frequency
oscillators
ma
=17.5dB at 1.8GHz
Bias
Bias,4
®
-25 technology
B,1
Package
SOT343
E,2
C,3
Description
SIEGET
biasing for high gain low noise figure
applications. I
according to I
Marking
MBs
4
®
-25 NPN Transistor with integrated
C
C
=10*I
can be controlled using I
Bias .
Chip
T0514
2001-08-10
BGB420
Bias