ST333C04CFL0 Vishay, ST333C04CFL0 Datasheet - Page 3

• Manufacturer Part Number: ST333C04CFL0
• Description: SCR PHASE CONT 400V 720A E-PUK
• Manufacturer: Vishay

Specifications of ST333C04CFL0

• Scr Type: Standard Recovery
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 3V
• Voltage - On State (vtm) (max): 1.96V
• Current - On State (it (av)) (max): 720A
• Current - On State (it (rms)) (max): 1435A
• Current - Gate Trigger (igt) (max): 200mA
• Current - Hold (ih) (max): 600mA
• Current - Off State (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 11000A, 11500A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AB, E-PUK
• Current - On State (it (rms) (max): 1435A
• Breakover Current Ibo Max: 11500 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.96 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Peak Repetitive Off-state Voltage, Vdrm: 400V
• Gate Trigger Current Max, Igt: 200mA
• Current It Av: 720A
• On State Rms Current It(rms): 1.435kA
• Peak Non Rep Surge Current Itsm 50hz: 11kA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *ST333C04CFL0; VS-ST333C04CFL0; VS-ST333C04CFL0; VSST333C04CFL0; VSST333C04CFL0

Note
• The table above shows the increment of thermal resistance R
Document Number: 93678
Revision: 15-May-08
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJ-hs
CONDUCTION
180°
120°
90°
60°
30°
SINGLE SIDE
SINUSOIDAL CONDUCTION
0.010
0.012
0.015
0.022
0.036
For technical questions, contact: [e-mail]
(Hockey PUK Version), 720 A
Inverter Grade Thyristors
DOUBLE SIDE
0.011
0.012
0.015
0.022
0.036
SYMBOL
SYMBOL
SYMBOL
R
P
+ V
R
- V
dV/dt
I
I
P
V
RRM
V
T
thC-hs
DRM
G(AV)
I
I
I
thJ-hs
GM
T
GT
GD
GM
GD
Stg
GT
GM
J
GM
thJ-hs
,
when devices operate at different conduction angles than DC
RECTANGULAR CONDUCTION
SINGLE SIDE
T
T
T
T
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
T
higher value available on request
T
J
J
J
J
J
J
= T
= T
= 25 °C, V
= T
= T
= T
0.007
0.012
0.016
0.023
0.036
J
J
J
J
J
maximum, f = 50 Hz, d% = 50
maximum, t
maximum, rated V
maximum, linear to 80 % V
maximum, rated V
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
A
= 12 V, R
DOUBLE SIDE
p
Vishay High Power Products
≤ 5 ms
0.007
0.013
0.017
0.023
0.037
a
= 6 Ω
DRM
DRM
/V
applied
RRM
ST333C..C Series
DRM
applied
TEST CONDITIONS
T
,
J
= T
J
maximum
- 40 to 125
- 40 to 150
TO-200AB (E-PUK)
VALUES
VALUES
VALUES
(1000)
0.020
0.010
9800
0.25
0.09
0.04
500
200
50
60
10
10
20
20
83
5
3
www.vishay.com
UNITS
UNITS
UNITS
UNITS
V/µs
K/W
(kg)
K/W
mA
mA
mA
°C
W
A
V
V
V
N
g
3