ST333C04CFL0 Vishay, ST333C04CFL0 Datasheet - Page 7

SCR PHASE CONT 400V 720A E-PUK

ST333C04CFL0

Manufacturer Part Number
ST333C04CFL0
Description
SCR PHASE CONT 400V 720A E-PUK
Manufacturer
Vishay
Datasheets

Specifications of ST333C04CFL0

Scr Type
Standard Recovery
Voltage - Off State
400V
Voltage - Gate Trigger (vgt) (max)
3V
Voltage - On State (vtm) (max)
1.96V
Current - On State (it (av)) (max)
720A
Current - On State (it (rms)) (max)
1435A
Current - Gate Trigger (igt) (max)
200mA
Current - Hold (ih) (max)
600mA
Current - Off State (max)
50mA
Current - Non Rep. Surge 50, 60hz (itsm)
11000A, 11500A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Chassis Mount
Package / Case
TO-200AB, E-PUK
Current - On State (it (rms) (max)
1435A
Breakover Current Ibo Max
11500 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
50 mA
Forward Voltage Drop
1.96 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
200 mA
Holding Current (ih Max)
600 mA
Mounting Style
SMD/SMT
Peak Repetitive Off-state Voltage, Vdrm
400V
Gate Trigger Current Max, Igt
200mA
Current It Av
720A
On State Rms Current It(rms)
1.435kA
Peak Non Rep Surge Current Itsm 50hz
11kA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*ST333C04CFL0
VS-ST333C04CFL0
VS-ST333C04CFL0
VSST333C04CFL0
VSST333C04CFL0
Document Number: 93678
Revision: 15-May-08
1 E 4
1 E 3
1 E 2
1 E 1
1 E 1
tp
ST33 3C ..C Se ries
Sinuso idal pulse
1 E 2
P u lse B ase w id t h (µ s)
1 0 0
0 .1
0.2
1 0
0 .0 0 1
1
0 .3
a ) R e c o m m e n d e d lo a d lin e fo r
b ) Re c o m m e n d e d lo a d lin e f o r
0.5
Re c t a n g ula r g a t e p u lse
t r< =1 µ s
< = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s
ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s
1
2
For technical questions, contact: ind-modules@vishay.com
3
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
5
1 E 3
10
(Hockey PUK Version), 720 A
20 jo ule s pe r p ulse
Inverter Grade Thyristors
0 .0 1
V G D
IG D
Fig. 17 - Gate Characteristics
D e v ic e : ST 3 3 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V )
1 E 4
In sta n t a n e o u s G at e C u rr e n t (A )
1 E 4
0 .1
( b )
( a )
1
1 E 1
( 1 ) P G M = 1 0 W , t p = 2 0 m s
( 2 ) P G M = 2 0 W , t p = 1 0 m s
( 3 ) P G M = 4 0 W , t p = 5 m s
( 4 ) P G M = 6 0 W , t p = 3 .3 m s
t p
Vishay High Power Products
ST3 33 C Se ries
Rec tang ula r pulse
di/dt = 50A /µs
1 0
( 1 )
1 E 2
0.2
P u lse Ba se w id t h (µ s)
( 2 )
0.3
ST333C..C Series
(3 )
0.4
( 4 )
1 0 0
0 .5
1
2
3
1 E 3
5
10
2 0 jou les p er pulse
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1 E 4
7

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