BT258X-800R,127 NXP Semiconductors, BT258X-800R,127 Datasheet - Page 3
![THYRISTOR 800V 8A SOT186A](/photos/5/32/53209/to-220-3fullpack_sot186a_sml.jpg)
BT258X-800R,127
Manufacturer Part Number
BT258X-800R,127
Description
THYRISTOR 800V 8A SOT186A
Manufacturer
NXP Semiconductors
Datasheet
1.BT258X-500R127.pdf
(6 pages)
Specifications of BT258X-800R,127
Package / Case
TO-220-3 Full Pack
Scr Type
Sensitive Gate
Voltage - Off State
800V
Voltage - Gate Trigger (vgt) (max)
1.5V
Voltage - On State (vtm) (max)
1.6V
Current - On State (it (av)) (max)
5A
Current - On State (it (rms)) (max)
8A
Current - Gate Trigger (igt) (max)
200µA
Current - Hold (ih) (max)
6mA
Current - Off State (max)
500µA
Current - Non Rep. Surge 50, 60hz (itsm)
75A, 82A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Current - On State (it (rms) (max)
8A
Breakover Current Ibo Max
82 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.6 V
Gate Trigger Voltage (vgt)
1.5 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
6 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934042990127
BT258X-800R
BT258X-800R
BT258X-800R
BT258X-800R
Philips Semiconductors
October 2002
Thyristors
logic level
Fig.2. Maximum permissible non-repetitive peak
8
6
4
2
0
Fig.1. Maximum on-state dissipation, P
Fig.3. Maximum permissible rms current I
9
8
7
6
5
4
3
2
1
0
-50
0
on-state current I
1000
P tot (W)
IT(RMS) / A
100
10
conduction
angle
degrees
10us
60
90
120
180
versus mounting base temperature T
average on-state current, I
ITSM / A
30
I
T
dI /dt limit
Tj initial = 25 C max
sinusoidal currents, t
T
a = form factor = I
form
factor
2.8
2.2
1.9
1.57
(a)
T
4
0
I TSM
time
2
4
100us
TSM
2.8
, versus pulse width t
Ths / C
50
T / s
2.2
T(RMS)
4
p
1ms
1.9
T(AV)
/ I
10ms.
T(AV)
100
I T(AV) (A)
, where
T hs(max) (˚C)
.
90 C
a = 1.57
tot
, versus
hs
T(RMS)
p
, for
.
10ms
6
150
85
90
95
100
105
110
115
120
125
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
1.6
1.4
1.2
0.8
0.6
0.4
80
70
60
50
40
30
20
10
24
20
16
12
0
8
4
0
0.01
1
(T
-50
1
ITSM / A
IT(RMS) / A
VGT(25 C)
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
GT
currents, f = 50 Hz; T
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
10
0.1
surge duration / s
, versus number of cycles, for
Tj / C
50
I
T
Tj initial = 25 C max
hs
100
BT258X series
Product specification
1
T
90˚C.
100
I TSM
time
Rev 2.000
1000
150
10
j
.