BT151-1000RT,127 NXP Semiconductors, BT151-1000RT,127 Datasheet - Page 4

• Manufacturer Part Number: BT151-1000RT,127
• Description: THYRISTOR 1000V 12A TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of BT151-1000RT,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 1000V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 2.5mA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 131A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 131 A
• Rated Repetitive Off-state Voltage Vdrm: 1000 V
• Off-state Leakage Current @ Vdrm Idrm: 2.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061435127; BT151-1000RT; BT151-1000RT

NXP Semiconductors
BT151-1000RT_1
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
TSM
(A)
(A)
10
10
10
25
20
15
10
5
0
3
2
10
10
t
f = 50 Hz; T
duration for sinusoidal currents
p
5
2
10 ms
mb
10
dl
134 C
1
T
/dt limit
1
surge duration (s)
10
001aaa954
4
12 A thyristor high blocking voltage high operating temperature
10
Rev. 01 — 6 August 2007
Fig 5. RMS on-state current as a function of mounting
I
T(RMS)
(A)
16
12
8
4
0
base temperature; maximum values
50
10
3
0
BT151-1000RT
50
t
T
p
I
T
j
(s)
initial = 25 C max
t
p
100
© NXP B.V. 2007. All rights reserved.
T
001aaa956
003aab828
mb
I
TSM
( C)
t
10
150
2
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