BT151-1000RT,127 NXP Semiconductors, BT151-1000RT,127 Datasheet - Page 6

• Manufacturer Part Number: BT151-1000RT,127
• Description: THYRISTOR 1000V 12A TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of BT151-1000RT,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 1000V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 2.5mA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A, 131A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 131 A
• Rated Repetitive Off-state Voltage Vdrm: 1000 V
• Off-state Leakage Current @ Vdrm Idrm: 2.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061435127; BT151-1000RT; BT151-1000RT

NXP Semiconductors
6. Characteristics
Table 5.
T
BT151-1000RT_1
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
I
Dynamic characteristics
dV
t
t
GT
L
H
D
R
gt
q
j
T
GT
= 25 C unless otherwise stated.
D
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
reverse current
rate of rise of off-state
voltage
gate-controlled turn-on
time
commutated turn-off
time
Conditions
V
V
Figure 10
V
Figure 11
I
I
V
V
V
exponential waveform; gate open
circuit; see
I
I
V
I
(dI
R
T
T
TM
G
TM
D
D
D
R
R
DM
DM
GK
V
V
= 23 A
= 100 mA; see
= 100 mA; dI
T
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 40 A; V
= 20 A; V
/dt)
D
D
= 0.67
= 0.67
= 100
= 12 V
= V
DRM(max)
RRM(max)
M
= 30 A/ s; dV
12 A thyristor high blocking voltage high operating temperature
DRM(max)
Rev. 01 — 6 August 2007
Figure 12
T
GT
GT
D
R
= 100 mA; see
V
V
= 100 mA; see
= 100 mA; see
= V
= 25 V;
; T
; T
DRM(max)
DRM(max)
G
/dt = 5 A/ s
; T
Figure 7
j
j
DRM(max)
= 150 C
= 150 C
j
= 150 C
D
; T
; T
/dt = 50 V/ s;
j
j
;
= 150 C;
= 150 C;
Figure 8
Min
2
-
-
-
-
0.25
-
-
-
-
-
BT151-1000RT
Typ
-
-
-
1.4
0.6
0.4
0.5
0.5
300
2
70
© NXP B.V. 2007. All rights reserved.
Max
15
40
20
1.75
1.5
-
2.5
2.5
-
-
-
Unit
mA
mA
mA
V
V
V
mA
mA
V/ s
s
s
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