BT152-500RT,127 NXP Semiconductors, BT152-500RT,127 Datasheet - Page 2

• Manufacturer Part Number: BT152-500RT,127
• Description: THYRISTOR 20A 500V SO220AB-3
• Manufacturer: NXP Semiconductors

Specifications of BT152-500RT,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 500V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 13A
• Current - On State (it (rms)) (max): 20A
• Current - Gate Trigger (igt) (max): 32mA
• Current - Hold (ih) (max): 60mA
• Current - Off State (max): 1mA
• Current - Non Rep. Surge 50, 60hz (itsm): 200A, 220A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 20A
• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Off-state Leakage Current @ Vdrm Idrm: 0.2 mA
• On-state Rms Current (it Rms): 20 A
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 0.6 V
• Gate Trigger Current (igt): 3 mA
• Holding Current (ih Max): 60 mA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063461127

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT152-500RT_1
Product data sheet
Pin
1
2
3
mb
Type number
BT152-500RT
Symbol
V
V
I
I
dI
I
P
T
T
T(AV)
T(RMS)
GM
stg
j
DRM
RRM
GM
T
/dt
Symbol
K
A
G
A
Pinning information
Ordering information
Limiting values
rate of rise of on-state
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
average on-state
current
RMS on-state current
current
peak gate current
peak gate power
storage temperature
junction temperature
Package
Name
TO-220AB;
SC-46
Description
cathode
anode
gate
mounting base; connected to
anode
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Conditions
half sine wave; T
half sine wave; all conduction angles; see
see
I
T
= 50 A; I
Figure 2
G
= 200 mA; dI
Rev. 01 — 12 May 2009
mb
≤ 122 °C; see
Simplified outline
G
/dt = 200 mA/µs
(TO-220AB; SC-46)
Figure 3
SOT78
1 2
mb
3
Figure
SCR, 20 A, 32 mA, 500 V, SOT78
1;
BT152-500RT
Graphic symbol
Min
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2009. All rights reserved.
A
sym037
Max
500
500
13
20
200
5
20
150
150
G
Version
SOT78
K
Unit
V
V
A
A
A/µs
A
W
°C
°C
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